PART |
Description |
Maker |
SCD32L SCD32L-15 |
VOLTAGE 20V ~ 40V 3.0 AMP Low Vf SchottkyB arrier Rectifiers
|
SeCoS Halbleitertechnol... SeCoS Halbleitertechnologie GmbH
|
SCK140LP SCK120LP |
VOLTAGE 20V ~ 40V 1.0AMP Low Vf Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
SR280 SR230 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
SM520B SM520B12 SM560B SM540B |
Voltage 20V ~ 60V 5.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
SCD22 |
VOLTAGE 20V ~ 60V 2.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
|
Intersil
|
LT3970EMS-3.3-PBF LT3970EMS-3.3-TRPBF LT3970EMS-5- |
40V, 350mA Step-Down Regulator with 2.5楼矛A Quiescent Current and Integrated Diodes 40V, 350mA Step-Down Regulator with 2.5μA Quiescent Current and Integrated Diodes 40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead Plastic MSOP, Temp E –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10 40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead (3mm × 2mm) Plastic DFN, Temp I –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10
|
http:// Linear Technology, Corp. LINEAR TECHNOLOGY CORP
|
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
|
KBJ2501 KBJ2502 KBJ2510 KBJ2505 KBJ2504 KBJ2503 KB |
Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 20V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel 25A SINGLE PHASE SILICON BRIDGE RECTIFIER Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 20V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel 5A单相硅桥式整流器 25A Single-Phase Silicon Bridge Rectifier
|
ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. SEP ELECTRONIC
|
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3 TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五(巴西)总裁| 7A条一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 100mA的一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五(巴西)总裁|5A一(c)|6 TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V. Microsemi, Corp.
|